Erratum to: A comment on phonon mass defect scattering
نویسندگان
چکیده
منابع مشابه
Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping
The interactions between thermal phonons and defects are conventionally described as scattering processes, an idea proposed almost a century ago. In this contribution, ab-initio molecular-dynamics simulations provide atomic-level insight into the nature of these interactions. The defect is the Si|X interface in a nanowire containing a δ-layer (X is C or Ge). The phonon-defect interactions are t...
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A formulation of the scattering-matrix method for calculating localized modes at any type of planar defect has been given by Achar and Barsch' and applied to the problem of determining the surface modes of a semi-infinite NaCl crystal. Here we will consider only the application of this formulation when the defect is a surface. Similar criticisms hold for other types of defects. Achar and Barsch...
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In the original publication of this article unfortunately the co-authors were omitted. The two co-authors are displayed now.
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The spectral Matthiessen’s rule is commonly used to calculate the total phonon scattering rate when multiple scattering mechanisms exist. Here we predict the spectral phonon relaxation time τ of defective bulk silicon using normal mode analysis based on molecular dynamics and show that the spectral Matthiessen’s rule is not accurate due to the neglect of the coupling between anharmonic phonon-p...
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Richard C. Hatch,1 Marco Bianchi,1 Dandan Guan,1,2 Shining Bao,2 Jianli Mi,3 Bo Brummerstedt Iversen,3 Louis Nilsson,1 Liv Hornekær,1 and Philip Hofmann1 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, DK-8000 Aarhus C, Denmark 2Department of Physics, Zhejiang University, Hangzhou, 310027, China 3Department of Chemistry, Center for Materials Crysta...
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ژورنال
عنوان ژورنال: Lettere al Nuovo Cimento
سال: 1972
ISSN: 1827-613X
DOI: 10.1007/bf02905272